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TGA8035-SCC
Gain Block Amplifier
q q q q q q
PHOTO ENLARGEMENT
6 to 18-GHz Frequency Range 13-dB Typical Gain 2.2:1 Typical Input/Output SWR
8035
12.5-dBm Typical Output Power at 1 -dB Gain Compression 5-dB Typical Noise Figure 2,4892 x 2,0574 x 0,1143 mm (0.098 x 0.081 x 0.0045 in.)
DESCRIPTION
The TriQuint TGA8035 - SCC is a two - stage GaAs monolithic amplifier designed for use as a broadband general-purpose gain block. T wo 300 - m gate - width FETs provide a 13- dB typical gain and a 5- dB noise figure from 6 to 18- GHz. Typical output power at 1- dB gain compression is 12.5- dBm. Shunt feedback is used around each active device to improve gain flatness and standing - wave ratio (SWR). Ground is provided to the circuitry through vias to the backside metallization. The TGA8035-SCC amplifier is suitable for a variety of broadband electronic warfare (EW) applications. The combination of gain, power, and noise figure makes this device an exceptional post amplifier following a low-noise amplifier. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as thermocompression and thermosonic wire- bonding processes. The TGA8035 - SCC is supplied in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
TGA8035-SCC
TYPICAL SMALL-SIGNAL POWER GAIN
20 18 16 14
V, V V= = 5 VD1D1, D2 D2 5 V V I D1 50% I DSS1 I D1 = = 50%I DSS1 I D2 50% I DSS2 I D2 = = 50%I DSS2 T= 25 C T A A = 25C
Gain (dB)
12
10 8 6
4
2 0
6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
TYPICAL NOISE FIGURE
8
7 6
VD1 D2 = 5 V VD1,,VVD2 = 5 V IID1 = 50% I DSS1 D1 = 50% DSS1 IID2 = 50% I DSS2 D2 = 50% DSS2 T A = 25 C TA = 25C
Noise Figure (dB)
5 4
3 2 1 0 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
TYPICAL OUTPUT POWER
20 18 16
P1dB
Output Power (dBm)
VD1,,VVD2 = 5 V VD1 D2 = 5 V IID1 = 50% I DSS1 D1 = 50% DSS1 IID2 = 50% I DSS2 D2 = 50% I DSS2 T A = 25 C TA = 25C
14 12
10 8 6
4
2 0
6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
2
TGA8035-SCC
TYPICAL RETURN LOSS
0 2
VD1, VD2 = 5 V VD1, V D2 = 5 V D1 50% DSS I ID1 == 50% II DSS1 D2 50% DSS I ID1 == 50% II DSS2 TTA= 25 C A = 25C
Return Loss (dB)
4 6 8 10 12 14 6 7 8 9 10 11 12 13 14 15 16 17 18
Input Input Output Output
Frequency (GHz)
ABSOLUTE MAXIMUM RATINGS
Drain supply voltage, VD1, VD2 ................................................................................................................
8V
Drain supply voltage range with r espect to negative supply voltage, VD1 - VG1, VD2 - VG2 .................... 0 V to 8 V Negative supply voltage range, VG1, VG2 ..................................................................................... . 0 V to - 5 V
Positive supply current, ID1 .................................................................................................................. I DSS1 Positive supply current, ID2 .................................................................................................................. I Power dissipation at (or below) 25 C base-plate temperature, P * ...................................................... D Input continuous wave power, PIN ............................................................ ....................................... .
DSS2
1.4 W 20 dBm
Operating channel temperature, TCH ** .............................................................................................. 150 C Mounting temperature (30 sec), TM .................................................................................................... 320 C Storage temperature range, TSTG ............................................................................................
Ratings over operating channel temperature range, T CH (unless otherwise noted)
- 65 to 150 C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25 C base - plate temperature, derate linearly at the rate of 3 mW/ C. * Operating channel temperatur e (TCH) directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
3
TGA8035-SCC
TYPICAL S-PARAMETERS
Frequency (GHz) MAG
S 11 ANG( ) MAG
S 21 ANG( ) MAG
S 12 ANG( ) MAG
S 22 ANG( )
GAIN (dB)
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0
0.54 0.35 0.31 0.31 0.28 0.24 0.25 0.30 0.37 0.42 0.46 0.48 0.48 0.46 0.43 0.38 0.33 0.27 0.25 0.24 0.24 0.22 0.21 0.24 0.24 0.23 0.28 0.35 0.41 0.53 0.68
75 71 75 62 34 -7 -53 -91 -117 -138 -154 -168 178 166 153 140 129 123 118 112 100 89 81 67 46 27 -4 -48 -92 -122 -149
2.34 3.49 4.33 4.89 5.16 5.28 5.27 5.05 4.92 4.82 4.71 4.68 4.73 4.91 5.13 5.28 5.42 5.52 5.68 5.61 5.59 5.40 5.10 5.05 5.12 5.06 5.27 5.49 4.91 4.01 3.37
55 9 -34 -73 -108 -141 -172 161 136 112 90 69 48 27 5 -18 -41 -64 -89 -113 -138 -163 174 153 129 103 78 46 9 -23 -55
0.013 0.018 0.021 0.022 0.022 0.021 0.021 0.020 0.019 0.021 0.021 0.020 0.020 0.021 0.021 0.021 0.021 0.021 0.020 0.017 0.013 0.014 0.015 0.012 0.007 0.010 0.005 0.007 0.012 0.012 0.008
109 77 46 15 -15 -44 -75 -102 -124 -144 -164 177 174 161 151 141 132 120 109 97 96 94 80 47 44 28 -38 -17 -85 -152 156
0.59 0.47 0.39 0.33 0.28 0.25 0.24 0.26 0.30 0.34 0.38 0.42 0.43 0.45 0.46 0.45 0.43 0.41 0.39 0.38 0.35 0.32 0.31 0.33 0.32 0.34 0.35 0.33 0.29 0.19 0.18
73 61 49 33 14 -7 -31 -52 -71 -88 -102 -115 -125 -134 -144 -154 -164 -173 178 167 154 143 136 123 114 108 93 83 73 75 100
7.4 10.9 12.7 13.8 14.2 14.5 14.4 14.1 13.8 13.7 13.5 13.4 13.5 13.8 14.2 14.5 14.7 14.8 15.1 15.0 14.9 14.6 14.1 14.1 14.2 14.1 14.4 14.8 13.8 12.1 10.5
I D1 = 50% I DSS1, I D2 = 50% I DSS2, VD1, VD2 = 5 V, TA = 25C Reference planes for S-parameter data include bond wires as specified in the "Recommended Assembly Diagram."
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
4
TGA8035-SCC
RF CHARACTERISTICS GP SWR(in) SWR(out) P 1dB NF
PARAMETER
TEST CONDITIONS
TYP
UNIT
Small-signal power gain Input standing-wave ratio Output standing-wave ratio Output power at 1-dB gain compression Noise figure
f f f f f
= 6 to 18 G Hz = 6 to 18 GHz = 6 to 18 G Hz = 6 to 18 G Hz = 6 to 18 GHz
13 dB 2.2:1 -- 2.2:1 -- 12.5 dBm 5 dB
VD1, VD2 = 5 V, VG1 = - 1 V, VG2 = - 1 V, TA = 25C
DC CHARACTERISTICS
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
I DSS1 Total zero-gate-voltage drain current at saturation for FET1 * I DSS2 Total zero-gate-voltage drain current at saturation for FET2 **
TA = 25C
V DS = 0.5 V to 3.5 V, V GS = 0 V DS = 0.5 V to 3.5 V, V GS = 0
36 36
108 108
mA mA
* VDS1 for I DSS1 is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe. ** VDS2 for I DSS2 is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
TEST CONDITIONS
FET
MMIC*
UNIT
R
JC
Thermal resistance, channel-to-backside
ID=72 mA, V D=5V
25C Base, 80C Channel** 85C Base, 151C Channel** 100C Base, 169C Channel**
152.5 184.7 192.8
76.3 92.4 96.4
C/W
* MMIC thermal resistance is the peak FET temperature rise divided by the total MMIC dissipated power (.72 W). * Hottest Gate Channel (Center of either FET). *
EQUIVALENT SCHEMATIC
FET 2 300 m RF Input V G1 FET 1 300 m V D1 VG2 V D2
R F Output
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
5
TGA8035-SCC
TYPICAL BIAS NETWORK
1
RF Input
TGA8035 3 4 5 6
2
RF Output
VD1,VD2 CBypass
VG1,VG2 RBypass CBypass
RECOMMENDED ASSEMBLY DIAGRAM
RF Input
RF Output
25
0.01 F VG1,VG2
0.01 F VD1,VD2
RF connections: bond using two 1-mil diameter, 20 to 25 - mil- length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential to stability.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
6
TGA8035-SCC
MECHANICAL DRAWING
0,1803 (0.0071)
2,3114 (0.0910) 2,0574 (0.081)
1,4656 (0.0577)
1
2
1,4681 (0.0578)
0,2108 (0.0083) 0 0
6
5
4
3
0,2108 (0.0083)
0,4039 (0.0159)
0,9246 (0.0364)
1,8034 (0.0710)
2,1590 (0.0850)
2,4892 (0.0980)
Units: millimeters (inches) Thickness: 0,1143 (0.045) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad. Chip size tolerance: 0,0508 (0.002) Bond Bond Bond Bond Bond Bond pad pad pad pad pad pad #1 #2 #3 #4 #5 #6 (RF Input): (RF Output): (VD2): (VG2): (VD1): (VG1): 0,0940 x 0,2362 (0.0037 x 0.0093) 0,0991 x 0,2413 (0.0039 x 0.0095) 0,2286 x 0,1143 (0.0090 x 0.0045) 0,2286 x 0,1143 (0.0090 x 0.0045) 0,2286 x 0,1143 (0.0090 x 0.0045) 0,2286 x 0,1143 (0.0090 x 0.0045)
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
7

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